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onsemiDTC114EET1GDigital BJT - Pre-Biased

Trans Digital BJT NPN 50V 0.1A 300mW 3-Pin SOT-416 T/R

ON Semiconductor's NPN DTC114EET1G digital transistor is the ideal component to use in situations where digital signal processing is required. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 35@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It is made in a single configuration. This transistor has an operating temperature range of -55 °C to 150 °C.

Import TariffMay apply to this part

42,000 parts: Ships today

    Total$45.60Price for 3000

    • (3000)

      Ships today

      Ships from:
      United States of America
      Date Code:
      2235+
      Manufacturer Lead Time:
      31 weeks
      Country Of origin:
      China
      • In Stock: 42,000 parts
      • Price: $0.0152

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