onsemiDTC123EM3T5GDigital BJT - Pre-Biased
Trans Digital BJT NPN 50V 0.1A 600mW 3-Pin SOT-723 T/R
| Compliant | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| Mounting | Surface Mount |
| Package Height | 0.5 |
| Package Width | 0.8 |
| Package Length | 1.2 |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-723 |
| 3 | |
| Lead Shape | Flat |
Look no further than ON Semiconductor's NPN DTC123EM3T5G digital transistor's, the ideal component to use when designing a digital signal processing unit. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 8@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@5mA@10mA V. Its maximum power dissipation is 600 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It is made in a single configuration. This transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |