onsemiMJD45H11RLGGP BJT

Trans GP BJT PNP 80V 8A 1750mW 3-Pin(2+Tab) DPAK T/R

Design various electronic circuits with this versatile PNP MJD45H11RLG GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1750 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.

Import TariffMay apply to this part

1,800 parts: Ships today

    Total$1.36Price for 1

    • Service Fee  $7.00

      Ships today

      Ships from:
      United States of America
      Date Code:
      2430+
      Manufacturer Lead Time:
      12 weeks
      Minimum Of :
      1
      Maximum Of:
      1800
      Country Of origin:
      China
         
      • Price: $1.3590
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • Ships today

      Ships from:
      United States of America
      Date Code:
      2430+
      Manufacturer Lead Time:
      12 weeks
      Country Of origin:
      China
      • In Stock: 1,800 parts
      • Price: $1.3590