Compliant with Exemption | |
EAR99 | |
Active | |
8541.29.00.95 | |
SVHC | Yes |
SVHC Exceeds Threshold | Yes |
Automotive | No |
PPAP | No |
Mounting | Surface Mount |
Package Height | 2.38(Max) mm |
Package Width | 6.22(Max) mm |
Package Length | 6.73(Max) mm |
PCB changed | 2 |
Tab | Tab |
Standard Package Name | TO-252 |
Supplier Package | DPAK |
3 | |
Lead Shape | Gull-wing |
Design various electronic circuits with this versatile PNP MJD45H11RLG GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1750 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.