onsemiMJE5742GDarlington BJT
Trans Darlington NPN 400V 8A 2000mW 3-Pin(3+Tab) TO-220AB Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 1 | |
| 400 | |
| 8 | |
| 2.5@0.2A@4A|3.5@0.4A@8A | |
| 8 | |
| 2.5 | |
| -65 to 150 | |
| 2@0.2A@4A|3@0.4A@8A | |
| 200@4A@5V|50@500mA@5V | |
| 2000 | |
| -65 | |
| 150 | |
| Tube | |
| <500 | |
| Mounting | Through Hole |
| Package Height | 9.28(Max) mm |
| Package Width | 4.83(Max) mm |
| Package Length | 10.53(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220AB |
| 3 | |
| Lead Shape | Through Hole |
Are traditional transistors not providing enough of a current gain? The NPN MJE5742G Darlington transistor from ON Semiconductor can help. This product's maximum continuous DC collector current is 8 A, while its minimum DC current gain is 200@4A@5 V|50@500mA@5V. It has a maximum collector emitter saturation voltage of 2@0.2A@4A|3@0.4A@8A V. This Darlington transistor array's maximum emitter base voltage is 8 V, while its maximum base emitter saturation voltage is 2.5@0.2A@4A|3.5@0.4A@8A V. Its maximum power dissipation is 80000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 8 V. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |