onsemiMMBT2222ATT1GGP BJT

Trans GP BJT NPN 40V 0.6A 150mW 3-Pin SOT-416 T/R

The three terminals of this NPN MMBT2222ATT1G GP BJT from ON Semiconductor give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 150 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Total In Stock: 650 parts

Quantity Increments of 1 Minimum 50
  • Ships from:
    Hong Kong
    Manufacturer Lead Time:
    0 weeks
    • Price: