onsemiMMBT4124LT1GGP BJT

Trans GP BJT NPN 25V 0.2A 300000mW 3-Pin SOT-23 T/R

Add switching and amplifying capabilities to your electronic circuit with this NPN MMBT4124LT1G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 300000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 5 V.

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279,000 parts: Ships tomorrow

    Total$0.11Price for 1

    • Service Fee  $7.00

      Ships tomorrow

      Ships from:
      United States of America
      Date Code:
      2319+
      Manufacturer Lead Time:
      8 weeks
      Minimum Of :
      1
      Maximum Of:
      2999
      Country Of origin:
      China
         
      • Price: $0.1083
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • Ships tomorrow

      Ships from:
      United States of America
      Date Code:
      2319+
      Manufacturer Lead Time:
      8 weeks
      Country Of origin:
      China
      • In Stock: 27,000 parts
      • Price: $0.1083
    • (3000)

      Ships tomorrow

      Increment:
      3000
      Ships from:
      United States of America
      Date Code:
      2334+
      Manufacturer Lead Time:
      10 weeks
      Country Of origin:
      China
      • In Stock: 252,000 parts
      • Price: $0.0310