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onsemiMMBT6427LT1GDarlington BJT

Trans Darlington NPN 40V 0.5A 300mW 3-Pin SOT-23 T/R

Compared to other transistors, the NPN MMBT6427LT1G Darlington transistor from ON Semiconductor can provide you with a higher current gain value. This product's maximum continuous DC collector current is 0.5 A, while its minimum DC current gain is 10000@10mA@5 V|20000@100mA@5V|14000@500mA@5V. It has a maximum collector emitter saturation voltage of 1.2@0.5mA@50mA|1.5@0.5mA@500mA V. This Darlington transistor array's maximum emitter base voltage is 12 V, while its maximum base emitter saturation voltage is 2@0.5mA@500mA V. Its maximum power dissipation is 300 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 12 V. This Darlington transistor array has an operating temperature range of -55 °C to 150 °C.

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      Date Code:
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      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • Ships today

      Ships from:
      United States of America
      Date Code:
      2243+
      Manufacturer Lead Time:
      28 weeks
      Country Of origin:
      China
      • In Stock: 9,166 parts
      • Price: $0.0933
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      Ships from:
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      Date Code:
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      Manufacturer Lead Time:
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      Country Of origin:
      China
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