Diodes IncorporatedMMBTH10-7-FRF BJT

Trans RF BJT NPN 25V 0.05A 300mW 3-Pin SOT-23 T/R

Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN MMBTH10-7-F GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 3 V. Its maximum power dissipation is 300 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 3 V.

Import TariffMay apply to this part if shipping to the United States

2,975 parts: Ships tomorrow

    Total$32.84Price for 823

    • Service Fee  $7.00

      Ships tomorrow

      Ships from:
      United States of America
      Date Code:
      +
      Manufacturer Lead Time:
      8 weeks
      Minimum Of :
      823
      Maximum Of:
      2975
      Country Of origin:
      China
         
      • Price: $0.0399
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • Ships tomorrow

      Ships from:
      United States of America
      Date Code:
      +
      Manufacturer Lead Time:
      8 weeks
      Country Of origin:
      China
      • In Stock: 2,975 parts
      • Price: $0.0399