Diodes IncorporatedMMDT5401-7-FGP BJT
Trans GP BJT PNP 150V 0.2A 320mW 6-Pin SOT-363 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Small Signal | |
| Dual | |
| 2 | |
| 160 | |
| 150 | |
| 6 | |
| 1@1mA@10mA|1@5mA@50mA | |
| -55 to 150 | |
| 0.2@1mA@10mA|0.5@5mA@50mA | |
| 0.2 | |
| 50 | |
| 50@1mA@5V|60@10mA@5V|50@50mA@5V | |
| 320 | |
| 300 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.95 mm |
| Package Width | 1.3 mm |
| Package Length | 2.15 mm |
| PCB changed | 6 |
| Standard Package Name | SOT |
| Supplier Package | SOT-363 |
| 6 | |
| Lead Shape | Gull-wing |
Diodes Zetex has the solution to your circuit's high-voltage requirements with their PNP MMDT5401-7-F general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 320 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 150 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |