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onsemiMMUN2133LT1GDigital BJT - Pre-Biased
Trans Digital BJT PNP 50V 0.1mA 400mW 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Mounting | Surface Mount |
| Package Height | 0.94 |
| Package Width | 1.3 |
| Package Length | 2.9 |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
ON Semiconductor brings you their latest PNP MMUN2133LT1G digital transistor, a component that can easily provide you with most of the features of traditional BJT's while maintaining a digital form. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 400 mW. It has a maximum collector emitter voltage of 50 V. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
| EDA / CAD Models |