Compliant | |
EAR99 | |
Obsolete | |
Automotive | No |
PPAP | No |
Mounting | Through Hole |
Package Height | 5.33(Max) |
Package Width | 4.19(Max) |
Package Length | 5.2(Max) |
PCB changed | 3 |
Standard Package Name | TO |
Supplier Package | TO-92 |
3 | |
Lead Shape | Through Hole |
Jump-start your electronic circuit design with this versatile NPN MPSA06RLRAG GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 4 V. Its maximum power dissipation is 625 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 4 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
EDA / CAD Models |