onsemiMUN5235DW1T1GDigital BJT - Pre-Biased
Trans Digital BJT NPN 50V 0.1A 385mW 6-Pin SC-88 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Dual | |
| 50 | |
| 100 | |
| 80@5mA@10V | |
| 2.2 | |
| 0.25@1mA@10mA | |
| 0.047 | |
| 385 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.9 |
| Package Width | 1.25 |
| Package Length | 2 |
| PCB changed | 6 |
| Standard Package Name | SOT |
| Supplier Package | SC-88 |
| 6 |
Are you looking to build a digital signal processing device? The NPN MUN5235DW1T1G digital transistor, developed by ON Semiconductor, can provide a solution. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. Its maximum power dissipation is 385 mW. It has a maximum collector emitter voltage of 50 V. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It is made in a dual configuration. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |