onsemiMUN5333DW1T1GDigital BJT - Pre-Biased

Trans Digital BJT NPN/PNP 50V 0.1A 385mW 6-Pin SC-88 T/R

Look no further than ON Semiconductor's npn and PNP MUN5333DW1T1G digital transistor, which can provide a solution to your digital signal processing needs. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 385 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It is made in a dual configuration. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Import TariffMay apply to this part if shipping to the United States

Total In Stock: 12,000 parts

Quantity Increments of 3000 Minimum 3000
  • Ships from:
    United States of America
    Date Code:
    2349+
    Manufacturer Lead Time:
    9 weeks
    Country Of origin:
    China
    • Price: