onsemiNSVMMUN2133LT1GDigital BJT - Pre-Biased
Trans Digital BJT PNP 50V 0.1A 400mW 3-Pin SOT-23 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Yes |
| PNP | |
| Single | |
| 50 | |
| 100 | |
| 80@5mA@10V | |
| 4.7 | |
| 0.25@0.3mA@10mA | |
| 0.1 | |
| 400 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Mounting | Surface Mount |
| Package Height | 0.94 |
| Package Width | 1.3 |
| Package Length | 2.9 |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
ON Semiconductor brings you their latest PNP NSVMMUN2133LT1G digital transistor, a component that can easily provide you with most of the features of traditional BJT's while maintaining a digital form. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 400 mW. It has a maximum collector emitter voltage of 50 V. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It is made in a single configuration. This transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |