NXP SemiconductorsPBSS4032PT,215GP BJT
Trans GP BJT PNP 30V 2.4A 1100mW Automotive AEC-Q101 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| SVHC | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| PNP | |
| Bipolar Power | |
| Single | |
| 1 | |
| 30 | |
| 30 | |
| 5 | |
| 0.95@100mA@1A|1.05@200mA@2A | |
| 150 | |
| 0.15@50mA@500mA|0.23@50mA@1A|0.33@200mA@2A|0.375@10mA@1A | |
| 2.4 | |
| 100 | |
| 150@1A@2V|200@500mA@2V | |
| 1100 | |
| 160(Typ) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1(Max) |
| Package Width | 1.4(Max) |
| Package Length | 3(Max) |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
This specially engineered PNP PBSS4032PT,215 GP BJT from NXP Semiconductors comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1100 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |