onsemiSMUN5131DW1T1GDigital BJT - Pre-Biased
Trans Digital BJT PNP 50V 0.1A 385mW 6-Pin SC-88 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | Yes |
| PPAP | Yes |
| PNP | |
| Dual | |
| 50 | |
| 100 | |
| 8@5mA@10V | |
| 2.2 | |
| 0.25@5mA@10mA | |
| -55 to 150 | |
| 1 | |
| 385 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| <30 | |
| Mounting | Surface Mount |
| Package Height | 0.9 |
| Package Width | 1.25 |
| Package Length | 2 |
| PCB changed | 6 |
| Standard Package Name | SOT |
| Supplier Package | SC-88 |
| 6 |
If you require the digital form of a traditional BJT for your signal processing needs, then the PNP SMUN5131DW1T1G digital transistor from ON Semiconductor is for you. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 8@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@5mA@10mA V. Its maximum power dissipation is 385 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a dual configuration.
| EDA / CAD Models |