STMicroelectronicsSTB13007DT4GP BJT
Trans GP BJT NPN 400V 8A 80000mW 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| Mounting | Surface Mount |
| Package Height | 4.6(Max) |
| Package Width | 9.35(Max) |
| Package Length | 10.4(Max) |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO-263 |
| Supplier Package | D2PAK |
| 3 | |
| Lead Shape | Gull-wing |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN STB13007DT4 GP BJT from STMicroelectronics. This bipolar junction transistor's maximum emitter base voltage is 9 V. Its maximum power dissipation is 80000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 9 V.
| EDA / CAD Models |