STMicroelectronicsSTP03D200Darlington BJT
Trans Darlington NPN 1200V 0.1A 40000mW 3-Pin(3+Tab) TO-220AB Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 1 | |
| 1200 | |
| 2000 | |
| 20 | |
| 2@0.5mA@50mA | |
| 0.1 | |
| 100 | |
| 2@0.5mA@50mA | |
| 200@30mA@10V|230@20mA@10V | |
| 400 | |
| -65 | |
| 150 | |
| Tube | |
| Industrial | |
| Mounting | Through Hole |
| Package Height | 9.15(Max) |
| Package Width | 4.6(Max) |
| Package Length | 10.4(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220AB |
| 3 | |
| Lead Shape | Through Hole |
Amplify your current using STMicroelectronics' NPN STP03D200 Darlington transistor in order to yield a higher current gain. This Darlington transistor array's maximum emitter base voltage is 20 V, while its maximum base emitter saturation voltage is 2@0.5mA@50mA V. This product's maximum continuous DC collector current is 0.1 A, while its minimum DC current gain is 230@20mA@10 V|200@30mA@10V. It has a maximum collector emitter saturation voltage of 2@0.5mA@50mA V. Its maximum power dissipation is 40000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 1200 V and a maximum emitter base voltage of 20 V. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |