onsemiTIP112GDarlington BJT

Trans Darlington NPN 100V 2A 2000mW 3-Pin(3+Tab) TO-220AB Tube

Do you need a device that can yield much higher current gains? Thanks to ON Semiconductor, the NPN TIP112G Darlington transistor can amplify a current to meet your needs. This product's maximum continuous DC collector current is 2 A, while its minimum DC current gain is 1000@1A@4 V|500@2A@4V. It has a maximum collector emitter saturation voltage of 2.5@8mA@2A V. This Darlington transistor array's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C.

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84 parts: Ships today

    Total$24.40Price for 50

    • (50)

      Ships today

      Ships from:
      United States of America
      Date Code:
      2315+
      Manufacturer Lead Time:
      13 weeks
      Country Of origin:
      China
      • In Stock: 84 parts
      • Price: $0.4879