onsemiUMZ1NT1GGP BJT

Trans GP BJT NPN/PNP 50V 0.2A 385mW 6-Pin SC-88 T/R

The three terminals of this npn and PNP UMZ1NT1G GP BJT from ON Semiconductor give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 385 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

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      Date Code:
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      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
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      Ships from:
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      Date Code:
      2402+
      Manufacturer Lead Time:
      20 weeks
      Country Of origin:
      China
      • In Stock: 32,000 parts
      • Price: $0.1305
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      Increment:
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      Ships from:
      United States of America
      Date Code:
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      Manufacturer Lead Time:
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      Country Of origin:
      China
      • In Stock: 6,000 parts
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