Diodes IncorporatedZTX601STZDarlington BJT
Trans Darlington NPN 160V 1A 1000mW 3-Pin E-Line Box
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Mounting | Through Hole |
| Package Height | 4.01(Max) |
| Package Width | 2.41(Max) |
| Package Length | 4.77(Max) |
| PCB changed | 3 |
| Standard Package Name | TO |
| Supplier Package | E-Line |
| 3 | |
| Lead Shape | Through Hole |
Do you need a device that can yield much higher current gains? Thanks to Diodes Zetex, the NPN ZTX601STZ Darlington transistor can amplify a current to meet your needs. This Darlington transistor array's maximum emitter base voltage is 10 V, while its maximum base emitter saturation voltage is 1.9@10mA@1A V. This product's maximum continuous DC collector current is 1 A, while its minimum DC current gain is 1000@50mA@10 V|2000@500mA@10V|1000@1A@10V. It has a maximum collector emitter saturation voltage of 1.1@5mA@0.5A|1.2@10mA@1A V. Its maximum power dissipation is 1000 mW. This Darlington transistor array has a minimum operating temperature of -55 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 10 V.
| EDA / CAD Models |