Central Semiconductor 2N3440 PBFREE GP BJT
Trans GP BJT NPN 250V 1A 1000mW 3-Pin TO-39
Especificaciones técnicas del producto
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.40 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 300 | |
| 250 | |
| 7 | |
| 0.5 | |
| 1.3@4mA@50mA | |
| -65 to 200 | |
| 0.5@4mA@50mA | |
| 1 | |
| 20000 | |
| 40@20mA@10V | |
| 1000 | |
| 15(Min) | |
| -65 | |
| 200 | |
| Diameter | 9.4(Max) |
| Mounting | Through Hole |
| Package Height | 6.6(Max) |
| PCB changed | 3 |
| Standard Package Name | TO |
| Supplier Package | TO-39 |
| 3 |
Thanks to Central Semiconductor, your circuit can handle high levels of voltage using the NPN 2N3440 PBFREE general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 250 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.
Símbolos y Huellas
| EDA / CAD Models |
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