Diodes IncorporatedBC846AS-7GP BJT
Trans GP BJT NPN 65V 0.1A 200mW 6-Pin SOT-363 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Dual | |
| 2 | |
| 80 | |
| 65 | |
| 6 | |
| 0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA | |
| 0.25@0.5mA@10mA|0.6@5mA@100mA | |
| 0.1 | |
| 15 | |
| 110@2mA@5V | |
| 200 | |
| 100(Min) | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Mounting | Surface Mount |
| Package Height | 0.95 |
| Package Width | 1.3 |
| Package Length | 2.15 |
| PCB changed | 6 |
| Standard Package Name | SOT |
| Supplier Package | SOT-363 |
| 6 | |
| Lead Shape | Gull-wing |
Implement this NPN BC846AS-7 GP BJT from Diodes Zetex to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 200 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |