Infineon Technologies AGBC846SH6327XTSA1GP BJT

Trans GP BJT NPN 65V 0.1A 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R

Compared to other transistors, the NPN BC846SH6327XTSA1 general purpose bipolar junction transistor, developed by Infineon Technologies, can offer a high-voltage solution in your circuit. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 250 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.

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