Infineon Technologies AGBC860BE6327HTSA1GP BJT
Trans GP BJT PNP 45V 0.1A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.21.00.75 | |
| Automotive | Yes |
| PPAP | Unknown |
| PNP | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 50 | |
| 45 | |
| 5 | |
| 0.7(Typ)@0.5mA@10mA|0.85(Typ)@5mA@100mA | |
| 150 | |
| 0.3@0.5mA@10mA|0.65@5mA@100mA | |
| 0.1 | |
| 15 | |
| 220@2mA@5V | |
| 330 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Mounting | Surface Mount |
| Package Height | 1(Max) |
| Package Width | 1.3 |
| Package Length | 2.9 |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
Jump-start your electronic circuit design with this versatile PNP BC860BE6327HTSA1 GP BJT from Infineon Technologies. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 330 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |