Infineon Technologies AGBCR166E6327HTSA1BJT digital

Trans Digital BJT PNP 50V 0.1mA 200mW 3-Pin SOT-23 T/R Automotive AEC-Q101

Infineon Technologies brings you their latest PNP BCR166E6327HTSA1 digital transistor, a component that can easily provide you with most of the features of traditional BJT's while maintaining a digital form. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 70@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 200 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It is made in a single configuration. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

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2,990 piezas: Se puede enviar en 11 días

    Total$0.02Price for 1

    • Se puede enviar en 11 días

      Ships from:
      Estados Unidos de América
      Date Code:
      1552+
      Manufacturer Lead Time:
      0 semanas
      Country Of origin:
      China
      • In Stock: 2,990 piezas
      • Price: $0.0151