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Diodes IncorporatedBCX6825TAGP BJT

Trans GP BJT NPN 20V 1A 1000mW 4-Pin(3+Tab) SOT-89 T/R

This specially engineered NPN BCX6825TA GP BJT from Diodes Zetex comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 5 V.

A datasheet is only available for this product at this time.