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Diodes IncorporatedBCX6825TAGP BJT
Trans GP BJT NPN 20V 1A 1000mW 4-Pin(3+Tab) SOT-89 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single Dual Collector | |
| 1 | |
| 25 | |
| 20 | |
| 5 | |
| 0.5@100mA@1A | |
| 1 | |
| 160@500mA@1V|50@5mA@10V|60@1A@1V | |
| 1000 | |
| 100(Min) | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Mounting | Surface Mount |
| Package Height | 1.5 |
| Package Width | 2.5 |
| Package Length | 4.5 |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | SOT |
| Supplier Package | SOT-89 |
| 4 | |
| Lead Shape | Flat |
This specially engineered NPN BCX6825TA GP BJT from Diodes Zetex comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |