onsemiBD679GBJT Darlington
Trans Darlington NPN 80V 4A 40000mW 3-Pin(3+Tab) TO-225 Box
| Compliant | |
| EAR99 | |
| Obsolete | |
| Automotive | No |
| PPAP | No |
| Mounting | Through Hole |
| Package Height | 11.1(Max) |
| Package Width | 3(Max) |
| Package Length | 7.8(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-225 |
| 3 | |
| Lead Shape | Through Hole |
Compared to other transistors, the NPN BD679G Darlington transistor from ON Semiconductor can provide you with a higher current gain value. This Darlington transistor array's maximum emitter base voltage is 5 V. This product's maximum continuous DC collector current is 4 A, while its minimum DC current gain is 750@1.5A@3 V. It has a maximum collector emitter saturation voltage of 2.5@30mA@1.5A V. Its maximum power dissipation is 40000 mW. This product comes packaged in bulk, so the parts will be stored loosely. This Darlington transistor array has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |