Infineon Technologies AGBFP740FH6327XTSA1BJT RF
Trans RF BJT NPN 4V 0.045A 160mW Automotive AEC-Q101 4-Pin TSFP T/R
| Compliant | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN | |
| SiGe | |
| Single Dual Emitter | |
| 1 | |
| 13 | |
| 4 | |
| <20 | |
| 1.2 | |
| 0.045 | |
| 0.001 to 0.06 | |
| 40 | |
| 40 | |
| 3V/25mA | |
| 160@25mA@3V | |
| 120 to 200 | |
| 0.4 | |
| 0.08 | |
| 160 | |
| 8(Typ) | |
| 32(Max) | |
| 24.5(Typ) | |
| 45000(Typ) | |
| 1.5(Typ) | |
| -55 | |
| 150 | |
| Automotive | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.55 |
| Package Width | 0.8 |
| Package Length | 1.4 |
| PCB changed | 4 |
| Supplier Package | TSFP |
| 4 |
Designed with semiconductor technology, this BFP740FH6327XTSA1 RF amplifier from Infineon Technologies easily operates at high RF frequencies. This RF transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |