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Infineon Technologies AGBFS17WH6327XTSA1BJT RF
Trans RF BJT NPN 15V 0.025A 280mW Automotive AEC-Q101 3-Pin SOT-323 T/R
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| Mounting | Surface Mount |
| Package Height | 0.9(Max) |
| Package Width | 1.25 |
| Package Length | 2 |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-323 |
| 3 | |
| Lead Shape | Gull-wing |
Look no further than the BFS17WH6327XTSA1 RF bi-polar junction transistor, developed by Infineon Technologies, which can offer high radio frequency power compatibility. This product's minimum DC current gain is 40@2mA@1 V|20@25mA@1V. It has a maximum collector emitter saturation voltage of 0.4@1mA@10mA V. This RF transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |