Diodes IncorporatedDZT5551-13GP BJT
Trans GP BJT NPN 160V 0.6A 2000mW 4-Pin(3+Tab) SOT-223 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single Dual Collector | |
| 1 | |
| 180 | |
| 160 | |
| 6 | |
| 1.2@5mA@50mA|1@1mA@10mA | |
| 0.15@1mA@10mA|0.2@5mA@50mA | |
| 0.6 | |
| 50 | |
| 30@50mA@5V|80@10mA@5V|80@1mA@5V | |
| 2000 | |
| 300 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.6 |
| Package Width | 3.5 |
| Package Length | 6.5 |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | SOT |
| Supplier Package | SOT-223 |
| 4 | |
| Lead Shape | Gull-wing |
Thanks to Diodes Zetex, your circuit can handle high levels of voltage using the NPN DZT5551-13 general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 2000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |