Infineon Technologies AG IGP40N65F5XKSA1 Chip IGBT
Trans IGBT Chip N-CH 650V 74A 250W 3-Pin(3+Tab) TO-220 Tube
Especificaciones técnicas del producto
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Trench Stop 5 | |
| N | |
| Single | |
| 650 | |
| ±20 | |
| 1.6 | |
| 74 | |
| 0.1 | |
| 250 | |
| -40 | |
| 175 | |
| Tube | |
| Mounting | Through Hole |
| Package Height | 9.25 |
| Package Width | 4.4 |
| Package Length | 10 |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220 |
| 3 |
This IGP40N65F5XKSA1 IGBT transistor from Infineon Technologies will work perfectly in your circuit. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 255000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 175 °C. It is made in a single configuration.
Símbolos y Huellas
| EDA / CAD Models |
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