| RoHS (Unión Europea) | Compliant |
| ECCN (Estados Unidos) | EAR99 |
| Estatus de pieza | Active |
| Código HTS | 8542.32.00.02 |
| Automotive | No |
| PPAP | No |
| DRAM Type | Mobile SDRAM |
| Chip Density (bit) | 128M |
| Organization | 4Mx32 |
| Number of Internal Banks | 4 |
| Number of Words per Bank | 1M |
| Number of Bits/Word (bit) | 32 |
| Data Bus Width (bit) | 32 |
| Maximum Clock Rate (MHz) | 166 |
| Maximum Access Time (ns) | 6 |
| Address Bus Width (bit) | 14 |
| Process Technology | CMOS |
| Interface Type | LVCMOS |
| Minimum Operating Supply Voltage (V) | 2.7 |
| Typical Operating Supply Voltage (V) | 3.3 |
| Maximum Operating Supply Voltage (V) | 3.6 |
| Operating Current (mA) | 85 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 85 |
| Supplier Temperature Grade | Industrial |
| Number of I/O Lines (bit) | 32 |
