RoHS (Unión Europea) | Compliant |
ECCN (Estados Unidos) | EAR99 |
Estatus de pieza | Active |
Código HTS | 8542.32.00.36 |
Automotive | No |
PPAP | No |
DRAM Type | DDR3 SDRAM |
Chip Density (bit) | 4G |
Organization | 256Mx16 |
Number of Internal Banks | 8 |
Number of Words per Bank | 32M |
Number of Bits/Word (bit) | 16 |
Data Bus Width (bit) | 16 |
Maximum Clock Rate (MHz) | 1866 |
Maximum Access Time (ns) | 20 |
Address Bus Width (bit) | 18 |
Process Technology | CMOS |
Minimum Operating Supply Voltage (V) | 1.425 |
Typical Operating Supply Voltage (V) | 1.5 |
Maximum Operating Supply Voltage (V) | 1.575 |
Operating Current (mA) | 310 |
Minimum Operating Temperature (°C) | -40 |
Maximum Operating Temperature (°C) | 95 |
Supplier Temperature Grade | Industrial |
Number of I/O Lines (bit) | 16 |
Mounting | Surface Mount |
Package Height | 1(Max) |
Package Width | 9 |
Package Length | 13 |
PCB changed | 96 |
Standard Package Name | BGA |
Supplier Package | TW-BGA |
Pin Count | 96 |
Lead Shape | Ball |