IXYSIXGX120N60A3Chip IGBT
Trans IGBT Chip N-CH 600V 200A 780W 3-Pin(3+Tab) PLUS 247
Compliant with Exemption | |
EAR99 | |
Active | |
SVHC | Yes |
Índice de SEP por encima del límite autorizado | Yes |
Automotive | No |
PPAP | No |
Mounting | Through Hole |
Package Height | 21.34(Max) mm |
Package Width | 5.21(Max) mm |
Package Length | 16.13(Max) mm |
PCB changed | 3 |
Tab | Tab |
Standard Package Name | PLUS 247 |
Supplier Package | PLUS 247 |
3 | |
Lead Shape | Through Hole |
Use the IXGX120N60A3 IGBT transistor from Ixys Corporation as an electronic switch. Its maximum power dissipation is 780000 mW. It has a maximum collector emitter voltage of 600 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.