IXYSIXYH40N90C3D1Chip IGBT

Trans IGBT Chip N-CH 900V 90A 500W 3-Pin(3+Tab) TO-247AD

This IXYH40N90C3D1 IGBT transistor from Ixys Corporation will work perfectly in your circuit. It has a maximum collector emitter voltage of 900 V. Its maximum power dissipation is 500000 mW. It is made in a single configuration. This device is made with xpt technology. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

A datasheet is only available for this product at this time.