| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Mounting | Surface Mount |
| Package Height | 4.83(Max) mm |
| Package Width | 9.65(Max) mm |
| Package Length | 10.29(Max) mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO-263 |
| Supplier Package | D2PAK |
| 3 | |
| Lead Shape | Gull-wing |
Jump-start your electronic circuit design with this versatile PNP MJB45H11G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |