onsemi MJD112G BJT Darlington
Trans Darlington NPN 100V 2A 1750mW 3-Pin(2+Tab) DPAK Tube
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Mounting | Surface Mount |
| Package Height | 2.38(Max) |
| Package Width | 6.22(Max) |
| Package Length | 6.73(Max) |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| 3 | |
| Lead Shape | Gull-wing |
Amplify your current using ON Semiconductor's NPN MJD112G Darlington transistor in order to yield a higher current gain. This product's maximum continuous DC collector current is 2 A, while its minimum DC current gain is 500@0.5A@3 V|1000@2A@3V|200@4A@3V. It has a maximum collector emitter saturation voltage of 2@8mA@2A|3@40mA@4A V. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 4@40mA@4A V. Its maximum power dissipation is 1750 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C.
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