STMicroelectronicsMJD3055T4GP BJT

Trans GP BJT NPN 60V 10A 20000mW 3-Pin(2+Tab) DPAK T/R

If you require a general purpose BJT that can handle high voltages, then the NPN MJD3055T4 BJT, developed by STMicroelectronics, is for you. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 20000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.

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2,500 piezas: Se puede enviar hoy

    Total$1,164.00Price for 2500

    • (2500)

      Se puede enviar hoy

      Ships from:
      Estados Unidos de América
      Date Code:
      2425+
      Manufacturer Lead Time:
      14 semanas
      Country Of origin:
      China
      • In Stock: 2,500 piezas
      • Price: $0.4656