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onsemiMMBT3904WT1GGP BJT

Trans GP BJT NPN 40V 0.2A 150mW 3-Pin SC-70 T/R

The NPN MMBT3904WT1G general purpose bipolar junction transistor, developed by ON Semiconductor, is the perfect solution for your high-current density needs. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 150 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

A datasheet is only available for this product at this time.