onsemiMUN5213T1GBJT digital

Trans Digital BJT NPN 50V 0.1A 310mW 3-Pin SC-70 T/R

Are you designing a digital processing circuit and are looking to apply the characteristics of traditional BJT's within? Look no further than the NPN MUN5213T1G digital transistor from ON Semiconductor. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 310 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.

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8,471 piezas: Se puede enviar hoy

    Total$0.14Price for 1

    • Service Fee  $7.00

      Se puede enviar hoy

      Ships from:
      Estados Unidos de América
      Date Code:
      2209+
      Manufacturer Lead Time:
      11 semanas
      Minimum Of :
      1
      Maximum Of:
      8471
      Country Of origin:
      China
         
      • Price: $0.1397
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • Se puede enviar hoy

      Ships from:
      Estados Unidos de América
      Date Code:
      2209+
      Manufacturer Lead Time:
      11 semanas
      Country Of origin:
      China
      • In Stock: 8,471 piezas
      • Price: $0.1397