onsemiNST30010MXV6T1GGP BJT

Trans GP BJT PNP 30V 0.1A 661mW 6-Pin SOT-563 T/R

Use this versatile PNP NST30010MXV6T1G GP BJT from ON Semiconductor to design various electronic circuits. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 661 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V.

Import TariffMay apply to this part

3,850 piezas: Se puede enviar hoy

    Total$0.28Price for 1

    • Service Fee  $7.00

      Se puede enviar hoy

      Ships from:
      Estados Unidos de América
      Date Code:
      2223+
      Manufacturer Lead Time:
      8 semanas
      Minimum Of :
      1
      Maximum Of:
      3850
      Country Of origin:
      China
         
      • Price: $0.2800
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • Se puede enviar hoy

      Ships from:
      Estados Unidos de América
      Date Code:
      2223+
      Manufacturer Lead Time:
      8 semanas
      Country Of origin:
      China
      • In Stock: 3,850 piezas
      • Price: $0.2800