Infineon Technologies AGPTFA220121MV4XUMA1RF MOSFETs
Trans RF MOSFET N-CH 65V 10-Pin SON EP T/R
| Compliant | |
| EAR99 | |
| Unconfirmed | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 2-Carrier W-CDMA|2-Tone|CW | |
| LDMOS | |
| 65 | |
| 12 | |
| 10 | |
| 2010(Typ)@10V | |
| 12 | |
| 20.5 | |
| 2200 | |
| 700 | |
| 42.5 | |
| -40 | |
| 175 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.42 |
| Package Width | 4 |
| Package Length | 4 |
| PCB changed | 10 |
| Standard Package Name | SON |
| Supplier Package | SON EP |
| 10 | |
| Lead Shape | No Lead |
Easily amplify or switch electronic signals and electrical power in a circuit with this semiconductor-based PTFA220121MV4XUMA1 RF amplifier from Infineon Technologies. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This RF power MOSFET has a minimum operating temperature of -40 °C and a maximum of 175 °C. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 2200 MHz.
| EDA / CAD Models |