STMicroelectronicsSTGP10M65DF2Chip IGBT
Trans IGBT Chip N-CH 650V 20A 115W 3-Pin(3+Tab) TO-220AB Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| EA | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Mounting | Through Hole |
| Package Height | 9.15(Max) |
| Package Width | 4.6(Max) |
| Package Length | 10.4(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220AB |
| 3 | |
| Lead Shape | Through Hole |
Don't be afraid to step up the amps in your device when using this STGP10M65DF2 IGBT transistor from STMicroelectronics. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 115000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with field stop|trench technology. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single configuration.
| EDA / CAD Models |