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STMicroelectronicsSTGW40M120DF3Chip IGBT
Trans IGBT Chip N-CH 1200V 80A 468W 3-Pin(3+Tab) TO-247 Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| EA | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Field Stop|Trench | |
| N | |
| Single | |
| 1200 | |
| ±20 | |
| 1.85 | |
| 80 | |
| 0.25 | |
| 468 | |
| -55 | |
| 175 | |
| Tube | |
| Industrial | |
| Mounting | Through Hole |
| Package Height | 20.15(Max) |
| Package Width | 5.15(Max) |
| Package Length | 15.75(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247 |
| 3 | |
| Lead Shape | Through Hole |
The STGW40M120DF3 IGBT transistor from STMicroelectronics will work effectively even with higher currents. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 468000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This device utilizes field stop|trench technology. This IGBT transistor has an operating temperature range of -55 °C to 175 °C.
| EDA / CAD Models |