STMicroelectronicsSTGW40V60DFChip IGBT
Trans IGBT Chip N-CH 600V 80A 283W 3-Pin(3+Tab) TO-247 Tube
Compliant with Exemption | |
EAR99 | |
Active | |
8541.29.00.95 | |
SVHC | Yes |
Índice de SEP por encima del límite autorizado | Yes |
Automotive | No |
PPAP | No |
Field Stop|Trench | |
N | |
Single | |
600 | |
±20 | |
1.8 | |
80 | |
0.25 | |
283 | |
-55 | |
175 | |
Tube | |
Industrial | |
Mounting | Through Hole |
Package Height | 20.15(Max) |
Package Width | 5.15(Max) |
Package Length | 15.75(Max) |
PCB changed | 3 |
Tab | Tab |
Standard Package Name | TO |
Supplier Package | TO-247 |
3 | |
Lead Shape | Through Hole |
The STGW40V60DF IGBT transistor from STMicroelectronics is the best electronic switch for fast switching. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 283000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes field stop|trench technology. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. It is made in a single configuration.
EDA / CAD Models |