STMicroelectronics STGW60H65DRF Chip IGBT
Trans IGBT Chip N-CH 650V 120A 420W 3-Pin(3+Tab) TO-247 Tube
Especificaciones técnicas del producto
| EAR99 | |
| Obsolete | |
| EA | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Mounting | Through Hole |
| Package Height | 20.15(Max) |
| Package Width | 5.15(Max) |
| Package Length | 15.75(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247 |
| 3 | |
| Lead Shape | Through Hole |
The STGW60H65DRF IGBT transistor from STMicroelectronics will work effectively even with higher currents. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 420000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
Símbolos y Huellas
| EDA / CAD Models |
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