STMicroelectronicsSTGW60H65FBChip IGBT
Trans IGBT Chip N-CH 650V 80A 375W 3-Pin(3+Tab) TO-247 Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| N | |
| Single | |
| 650 | |
| ±20 | |
| 1.6 | |
| 80 | |
| 0.25 | |
| 375 | |
| -40 | |
| 175 | |
| Tube | |
| Industrial | |
| Mounting | Through Hole |
| Package Height | 20.15(Max) |
| Package Width | 5.15(Max) |
| Package Length | 15.75(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247 |
| 3 | |
| Lead Shape | Through Hole |
This STGW60H65FB IGBT transistor from STMicroelectronics will work perfectly in your circuit. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 375000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -40 °C to 175 °C.
| EDA / CAD Models |