STMicroelectronicsSTGWT30V60DFChip IGBT
Trans IGBT Chip N-CH 600V 60A 258W 3-Pin(3+Tab) TO-3P Tube
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Mounting | Through Hole |
| Package Height | 18.7 |
| Package Width | 5(Max) |
| Package Length | 15.8(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-3P |
| 3 | |
| Lead Shape | Through Hole |
This powerful and secure STGWT30V60DF IGBT transistor from STMicroelectronics will make sure your circuit works properly. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 181000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 175 °C.
| EDA / CAD Models |