| EAR99 | |
| GaN | |
| Single | |
| JFET | |
| 1 | |
| HEMT | |
| 50 | |
| -10 | |
| 7.5 | |
| 9000000(Typ) | |
| 2.25 | |
| 70000 | |
| 8 | |
| -65 | |
| 250 |
| EDA / CAD Models |
| ECCN (Estados Unidos) | EAR99 |
| Material | GaN |
| Configuration | Single |
| Type | JFET |
| Number of Elements per Chip | 1 |
| Process Technology | HEMT |
| Maximum Drain Source Voltage (V) | 50 |
| Maximum Gate Source Voltage (V) | -10 |
| Maximum Continuous Drain Current (A) | 7.5 |
| Maximum IDSS (uA) | 9000000(Typ) |
| Typical Forward Transconductance (S) | 2.25 |
| Maximum Power Dissipation (mW) | 70000 |
| Typical Power Gain (dB) | 8 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Operating Temperature (°C) | 250 |
| EDA / CAD Models |
A datasheet is only available for this product at this time.
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